Microwave plasma processing method and apparatus

ABSTRACT

The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a microwave plasma processing methodand apparatus. More particularly, it relates to a microwave plasmaprocessing method and apparatus which are well suited to subjectsamples, such as semiconductor device substrates, to an etching process,a film forming process, etc. by the use of a microwave plasma processorof the type wherein a waveguide section includes electric dischargemeans isolated from a waveguide for the propagation of microwaves andhaving a plasma generation region therein.

2. Description of the Prior Art

As microwave plasma processing techniques in the prior art, there havebeen known examples as disclosed in "HITACHI REVIEW", Vol. 71, No. 5,pp. 33-38 (1989) and Japanese Patent Publication No. 34461/1978, whereinan electric discharge tube made of quartz is disposed inside a waveguidefor propagating microwaves, plasma is generated within the electricdischarge tube by the synergy of a microwave electric field and amagnetic field, and a semiconductor wafer set in a processing chamber issubjected to an etching process by utilizing the plasma.

Also, there have been known examples as disclosed in Japanese PatentLaid-open Nos. 103340/1984 and 25420/1989, wherein an electric dischargetube made of quartz is disposed inside a circular waveguide forpropagating microwaves, plasma is generated within the electricdischarge tube under the action of a microwave electric field and amagnetic field, and a sample, such as semiconductor device substrate,set in a processing chamber is subjected to an etching process or a filmforming process by utilizing the plasma.

SUMMARY OF THE INVENTION

In the process of a sample such as semiconductor device substrateutilizing plasma, unless a plasma density distribution corresponding tothe surface to-be-processed of the sample is made uniform, homogeneityin the process cannot be ensured within the surface to-be-processed ofthe sample.

In addition, the inventors of the present invention have found out that,in an etching process for an insulator, for example, silicon oxide film,ions in the plasma are higher in the degree of contribution to etchingthan active neutral particles such as radicals because the former ishigher in energy than the latter. However, when the energy of the ionsis too high, unfavorably ion damages are inflicted on the sample. Fromthe viewpoint of preventing the ion damages of the sample, accordingly,the plasma should preferably be at an energy level adapted to ionize aprocessing gas. For the purpose of raising a processing speed, it isrequired to enhance an ionization proportion, in other words, a plasmadensity.

In this regard, in the aforementioned prior-art techniques of both thetypes, namely, the microwave plasma processing techniques of the formertype called the type having a magnetic field and those of the lattertype called the type not having a magnetic field, a waveguide sectionincludes the electric discharge tube formed of quartz, i. e., amicrowave transmitting material, and the interior of the electricdischarge tube is filled with the plasma, while the exterior thereof isthe atmospheric air. Accordingly, a waveguide is formed of the microwavetransmitting material, and the microwaves having been propagated by thewaveguide are introduced into the plasma within the electric dischargetube, not only in the traveling direction thereof, but also in thesideward directions of the electric discharge tube, etc. Therefore, thetraveling state of the microwaves in the plasma becomes verycomplicated.

Thus, the prior art still has the problem to-be-solved that theuniformity of the plasma density distribution corresponding to thesurface to-be-processed of the sample is spoilt, so the homogeneity ofthe process within the surface to-be-processed of the sample degrades.

On the other hand, the enhancement of the plasma density as mentionedabove is required for raising the processing speed.

This is coped with by a measure such as changing a processing pressureor increasing the input power of the microwaves. The prior-arttechniques, however, undergo limitations in enhancing the processingspeed owing to the heightened plasma density. Incidentally, as the powerof the microwaves is increased more for the rise of the processingspeed, the uniformity of the plasma density distribution correspondingto the surface to-be-processed of the sample is spoilt more, andinfluence on the degradation of the homogeneity of the process withinthe surface to-be-processed of the sample becomes more serious.

The principal object of the present invention is to provide a microwaveplasma processing method and apparatus which can enhance and ensure thehomogeneity of a process within the surface to-be-processed of a sample.

Other objects of the present invention will become apparent from theensuing detailed description on embodiments.

The aforementioned principal object is accomplished by a microwaveplasma processing method comprising the step of oscillating microwaves;the step of introducing the microwaves in correspondence with only atraveling direction thereof, into electric discharge means isolated froma waveguide for propagation of the microwaves and having a plasmageneration region therein; the step of evacuating for pressure reductionthe interior of said electric discharge means; the step of introducing aprocessing gas into said electric discharge means; the step of turningthe processing gas introduced in said electric discharge means, intoplasma under, at least, an action of an electric field of themicrowaves; and the step of processing a surface to-be-processed of asample with the plasma; and by a microwave plasma processing apparatuswherein a waveguide section includes electric discharge means isolatedfrom a waveguide for propagation of microwaves and having a plasmageneration region therein, and a sample is processed by utilizingplasma; comprising the fact that a part of said electric discharge meanscorresponding to a traveling direction of the microwaves is formed of amicrowave transmitting material, while the other part thereof is formedof a microwave non-transmitting material.

That part of the electric discharge means included in the waveguidesection which corresponds to the traveling direction of the microwaves,the electric discharge means being isolated from the waveguide for thepropagation of the microwaves and having the plasma generation regiontherein, is formed of the microwave transmitting material, while theother part thereof is formed of the microwave non-transmitting material.

Accordingly, the microwaves having been propagated by the waveguide isintroduced into the electric discharge means through only the part ofthe electric discharge means formed of the microwave transmittingmaterial. Therefore, as compared with those in the case where themicrowaves are introduced also from the side surfaces etc. as in theprior art, the uniformity of the plasma density distributioncorresponding to the surface to-be-processed of the sample is sharplyenhanced, and the homogeneity of the process within the surfaceto-be-processed of the sample utilizing the plasma is enhanced.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a vertical sectional view of essential portions in a microwaveplasma etching equipment in the first embodiment of the presentinvention.

FIGS. 2 to 9 are graphs for explaining examples of the etching processesof silicon oxide films.

FIGS. 10 to 12 are graphs for explaining examples of the detections ofthe etching end points of silicon oxide films.

FIG. 13 is a vertical sectional view of essential portions in amicrowave plasma etching equipment in the second embodiment of thepresent invention.

FIG. 14 is a model diagram showing the relationships between the outputpower of a power source and the output voltage while comparing thesecond embodiment of the present invention with the prior art.

FIGS. 15 and 16 are vertical sectional views of the essential portionsof microwave plasma etching equipments each showing a practicableexample of a setup for regulating the interval between the top surfaceof an electric discharge block and the inner surface of the top wall ofa waveguide.

FIG. 17 is a vertical sectional view of essential portions in amicrowave plasma etching equipment in the third embodiment of thepresent invention.

FIG. 18 is a vertical sectional view of essential portions in amicrowave plasma etching equipment in the fourth embodiment of thepresent invention.

FIG. 19 is a vertical sectional view of essential portions in amicrowave plasma etching equipment in the fifth embodiment of thepresent invention.

FIG. 20 is a vertical sectional view of essential portions in amicrowave plasma etching equipment in the sixth embodiment of thepresent invention.

FIG. 21 is a vertical sectional view of essential portions in amicrowave plasma etching equipment in the seventh embodiment of thepresent invention.

FIG. 22 is a vertical sectional view of essential portions in amicrowave plasma etching equipment in the eighth embodiment of thepresent invention.

FIGS. 23 to 26 illustrate the ninth embodiment of the present invention,in which FIGS. 23 and 25 are vertical sectional views each showing theessential portions of a microwave plasma etching equipment; FIG. 24 is agraph showing the relationship between the temperature of an electricdischarge block and the relative selection ratio of a silicon oxide filmin the etching equipment in FIG. 23; and FIG. 26 is a graph showing therelationship between the number of processed samples and the variationwith-time of the relative selection ratio in the etching equipment inFIG. 25.

FIG. 27 is a vertical sectional view of essential portions in amicrowave plasma etching equipment in the tenth embodiment of thepresent invention.

FIG. 28 is a vertical sectional view of essential portions in amicrowave plasma etching equipment in the eleventh embodiment of thepresent invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Now, the first embodiment of the present invention will be describedwith reference to FIG. 1.

FIG. 1 is a vertical sectional constructional view of the essentialportions of a microwave plasma etching equipment in the embodiment ofthe present invention.

Referring to FIG. 1, a vacuum vessel 10 has a structure in which it isopen at its top part. The vacuum vessel 10 is made of, for example,stainless steel. In this case, the shape of the open top part of thevacuum vessel 10 is substantially circular as seen in plan. An exhaustnozzle 11 is formed at the bottom part of the side wall of the vacuumvessel 10. A vacuum pump unit 20 is disposed outside the vacuum vessel10. The exhaust nozzle 11 and the intake port of the vacuum pump unit 20are connected by an exhaust pipe 21. The exhaust pipe 21 is furnishedwith a switching valve (not shown), an exhaust resistance varying valve(not shown), etc.

In FIG. 1, an electric discharge block 30a is means having a plasmageneration region therein. The electric discharge block 30a is in theshape of a hollow cylinder whose cross-sectional area does not change inthe traveling direction of microwaves. It is made of a microwavenon-transmitting material, herein, a nonmagnetic electric conductor suchas aluminum. The outward dimension of the electric discharge block 30ais larger than the dimension of the open top part of the vacuum vessel10. The electric discharge block 30a is gastightly mounted on the topwall of the vacuum vessel 10 in such a manner that the inner hollowthereof has an axis being substantially a vertical axis and is held incommunication with the interior of the vacuum vessel 10 through the opentop part of this vacuum vessel. A microwave transmitting window 40a isprovided at the top part of the electric discharge block 30a whilegastight sealing the upper end part of the inner hollow of this block.The microwave transmitting window 40a is made of a microwavetransmitting material such as quartz or alumina. Thus, a space 50a shutoff from the exterior of the equipment is defined by the interior of thevacuum vessel 10, the inner hollow of the electric discharge block 30aand the microwave transmitting window 40a.

As shown in FIG. 1, a sample holder shaft 60 is gastightly attached tothe bottom wall of the vacuum vessel 10 in a state in which the upperpart thereof is plunged into the space 50a, while the lower part thereofis protruded out of the vacuum vessel 10. The bottom wall of the vacuumvessel 10 and the sample holder shaft 60 are electrically insulated byan electric insulator member 70. The axis of the sample holder shaft 60is substantially a vertical axis. A sample holder 61 has its onesurface, herein, its upper surface formed as a sample setting surface.The sample holder 61 is mounted on the upper end of the sample holdershaft 60 in such a manner that the sample setting surface is heldsubstantially horizontal. Of course, the sample holder shaft 60 and thesample holder 61 may well be unitarily formed. In this case, an RF powersource 80 which is a biasing power source is disposed outside the space50a. The sample holder shaft 60 is connected to the RF power source 80.The sample holder shaft 60 as well as the sample holder 61 is made of anelectric conductor, and the sample holder 61 is electrically conductivewith the sample holder shaft 60. On the other hand, the vacuum vessel 10is grounded, and herein, also the electric discharge block 30a isgrounded through the vacuum vessel 10. Incidentally, any of a DC powersource etc. can be alternatively used as the biasing power source.Besides, in the illustrated case, a coolant channel (not shown) isformed in the sample holder 61, and a coolant feed passage (not shown)and a coolant discharge passage (not shown) which communicate with thecoolant channel are respectively formed in the sample holder shaft 60. Acoolant feeder (not shown) is disposed outside the space 50a. Thecoolant feed port of the coolant feeder and the coolant feed passage ofthe sample holder shaft 60 are connected by a coolant feed pipe (notshown). One end of a coolant discharge pipe (not shown) is connected tothe coolant discharge passage of the sample holder shaft 60, while theother end thereof is connected to a coolant recovery tank (not shown) oris let open to the atmospheric air.

In the case of FIG. 1, the microwave transmitting window 40a and thesample setting surface of the sample holder 61 or the surfaceto-be-processed of a sample such as semiconductor device substrate 90set on the sample setting surface oppose to each other in the verticaldirection, and the planes thereof are substantially parallel to eachother. By the way, the constituent members should desirably be soarranged that the inner hollow of the electric discharge block 30a, themicrowave transmitting window 40a, and the sample setting surface of thesample holder 61 or the surface to-be-processed of the sample 90 aresubstantially concentric to one another. Besides, in the illustratedcase, the inner hollow of the electric discharge block 30a has a shapein which it is taperingly flared from its intermediate part to its lowerend part in the height direction of the electric discharge block 30a.This shape results from the fact that the cross-sectional area of theupper part of the inner hollow of the electric discharge block 30a issmaller than the area of the surface to-be-processed of the sample 90.Incidentally, in a case where the inner hollow of the electric dischargeblock 30a has a cross-sectional area larger than the area of the surfaceto-be-processed of the sample 90, it need not have the taperingly-flaredshape as stated above, but it may well have a cross section which issubstantially identical from its upper end part to its lower end part inthe height direction of the electric discharge block 30a.

As shown in FIG. 1, a gas feed passage 100 is formed within the electricdischarge block 30a. A processing gas source 101 is disposed outside thespace 50a. The processing gas source 101 and one end of the gas feedpassage 100 are connected by a gas feed pipe 102. The gas feed pipe 102is furnished with a switching valve (not shown), a gas flow ratecontroller (not shown), etc. The other end of the gas feed passage 100is let open to the inner hollow of the electric discharge block 30a atthe position between the upper end part and intermediate part of thisinner hollow in the height direction of the electric discharge block30a.

In the case of FIG. 1, a waveguide 110a is disposed outside the electricdischarge block 30a in a state in which it embraces the block 30atherein. The waveguide 110a terminates in the vacuum vessel 10. Herein,the waveguide 110a is substantially in the shape of a cylinder. A space120a having a predetermined height (interval) is formed between the topwall of the waveguide 110a being the closed end wall thereof and theupper end surface of the electric discharge block 30a (the upper surfaceof the microwave transmitting window 40a). In the illustrated case, anopening is formed in that part of the top wall of the waveguide 110awhich confronts the upper surface of the microwave transmitting window40a. Incidentally, the opening need not be always provided at the aboveposition. A magnetron 130 which is means for oscillating microwaves isdisposed outside the spaces 50a and 120a. The magnetron 130 and thewaveguide 110a are connected by waveguides 111 and 112. The interiors ofthe waveguides 111 and 112 are held in communication with the space 120athrough the opening of the top wall of the waveguide 110a. Here, thewaveguide 111 is a waveguide for rectangular/circular-mode orthogonaltransformation, and the waveguide 112 is a rectangular waveguide. By theway, the magnetron 130 and the waveguide 110a may well be connected byany other microwave propagation means, for example, a coaxial cable.

As seen from FIG. 1, air-core coils 140a and 141a which are means forgenerating a magnetic field are annularly mounted on the outer peripheryof the side wall of the waveguide 110a in the height direction so as toform two stages herein. Further, in the illustrated case, the air-corecoils 140a and 141a are substantially held in correspondence with thespace 120a and with the outer-peripheral side surface of the electricdischarge block 30a, respectively. They are respectively connected to apower source (not shown) through ON-OFF means (not shown), conductioncurrent regulation means (not shown), etc.

In the construction of FIG. 1, the space 50a is evacuated for pressurereduction by opening the switching valve as well as the exhaustresistance varying valve and actuating the vacuum pump unit 20. Inaddition, a predetermined etching gas is introduced at a predeterminedflow rate from the processing gas source 101 into the inner hollow ofthe electric discharge block 30a through the gas feed pipe 102 and thegas feed passage 100 furnished with the switching valve, gas flow ratecontroller, etc. That is, the etching gas is introduced into the space50a. Part of the etching gas introduced into the space 50a is exhaustedby the vacuum pump unit 20 through the regulation of the valve openingdegree of the exhaust resistance varying valve, whereby the pressure ofthe space 50a is regulated to an etching process pressure aspredetermined.

Besides, in the construction of FIG. 1, the sample 90, one sample inthis case, is carried into the vacuum vessel 10 by known transportationmeans (not shown). The sample 90 carried into the vacuum vessel 10 isdelivered from the transportation means to the sample holder 61. Thetransportation means having delivered the sample 90 is withdrawn to aplace where the process of the sample 90 is not hampered. The sample 90delivered to the sample holder 61 is set on the sample setting surfaceof this sample holder with its surface to-be-processed facing upwards.Also, the air-core coils 140a and 141a are energized, and the magneticfield is applied to the inner hollow of the electric discharge block30a.

In the equipment of FIG. 1, the magnetron 130 is operated to oscillatethe microwaves of, for example, 2.45 GHz. The oscillated microwaves arepropagated through the waveguide 112 and are subjected to the orthogonaltransformation from the rectangular mode into the circular mode thereofby the waveguide 111, whereupon the resulting microwaves are guided tothe waveguide 110a. Further, these microwaves are propagated into theelectric discharge block 30a through the microwave transmitting window40a only. The etching gas in the electric discharge block 30a is turnedinto plasma by the synergy between the magnetic field based on theair-core coils 140a, 141a and the electric field of the microwaves.Under the action of the intense magnetic field in the electric dischargeblock 30a, charged particles contained in the generated plasma arerestrained from diffusing in directions orthogonal to the magneticfield, and they are rapidly diffused toward the interior of the vacuumvessel 10 having a weak magnetic field, thereby to cover the surfaceto-be-processed of the sample 90 set on the sample holder 61. Thus, thesurface to-be-processed of the sample 90 is subjected to thepredetermined etching process by the plasma. Further, on this occasion,an RF bias voltage is applied to the sample holder 61 by the RF powersource 80, whereby positive ion species contained in the plasma areattracted toward the sample 90 and are caused to enter the surfaceto-be-processed thereof during the minus cycle times of the RF bias.Thus, the ion etching can be effected. Besides, the coolant channelformed in the sample holder 61 is supplied with a predetermined coolant(such as cooling water or any other coolant at a temperature below 0°C.) from the coolant feeder and through the coolant feed pipe as well asthe coolant feed passage. The coolant having flowed through the coolantchannel is recovered into the coolant recovery tank or discharged intothe atmosphere via a coolant discharge passage as well as a coolantdischarge pipe. Thus, the temperature of the sample 90 is regulated to apredetermined value.

As described above, in this embodiment, the electric discharge blockmade of the nonmagnetic electric conductor is disposed in the waveguide,so that the microwaves oscillated by the magnetron and propagatedthrough the waveguide are introduced into the electric discharge blockthrough only the microwave transmitting window of this electricdischarge block. Therefore, as compared with those in the prior-artconstruction wherein the microwaves are introduced also from the sidesurface of the electric discharge tube used, the uniformity of a plasmadensity distribution corresponding to the surface to-be-processed of thesample can be sharply enhanced, and the homogeneity of the process canaccordingly be enhanced within the surface to-be-processed of thesample.

Moreover, since the electric discharge block is made of the nonmagneticelectric conductor, the intensity and distributed state of the magneticfield which is generated by the air-core coils and which is applied tothe inner hollow of the electric discharge block, namely, the plasmageneration region are not weakened and disturbed by the electricdischarge block, and hence, the synergy between the microwave electricfield and the magnetic field can proceed very efficiently. Inconsequence, the plasma density corresponding to the surfaceto-be-processed of the sample can be prevented from lowering, and therate of the etching process within the surface to-be-processed of thesample can be prevented from lowering. In addition, since the electricdischarge block is made of the nonmagnetic electric conductor, theintensity of the magnetic field which is applied to the plasmageneration region is heightened more, and the synergy between themicrowave electric field and the magnetic field can be intensified more.In consequence, the plasma density corresponding to the surfaceto-be-processed of the sample can be heightened more, and the rate ofthe etching process within the surface to-be-processed of the sample canbe enhanced more. By the way, in a microwave plasma etching equipment ofthe type having no magnetic field wherein only the microwave electricfield is utilized for plasma generation without employing the magneticfield, the electric discharge block need not be made of the nonmagneticelectric conductor as in this embodiment, but it may be satisfactorilymade of an electric conductor.

Besides, since the inner hollow of the electric discharge block is inthe taperingly-flared shape, the lateral diffusion of the plasmaproceeds with ease, and plasma having a larger area to that extent isgenerated, so that the inner and outer peripheral parts of the surfaceto-be-processed of a sample of large diameter can be homogeneouslyetched.

Furthermore, while the homogeneity of the etching process within thesurface to-be-processed of the sample can be enhanced, the rate of theetching process can be raised owing to the ion etching performed by thebias application.

Incidentally, a distance from the surface to-be-processed of the sampleplaced on the sample setting surface of the sample holder to the innersurface of the microwave transmitting window should desirably be set at,at least, 1/2 of a guide wavelength in the inner hollow of the electricdischarge block in order to more stabilize an electric discharge statein the inner hollow. Thus, the homogeneity of the etching process withinthe surface to-be-processed of the sample can be enhanced more stably.

Next, examples of the etching process of a silicon oxide film being asample will be explained. The silicon oxide film was stacked on asilicon film.

In this case, a mixed gas consisting of C₄ F₈, CH₃ F and SF₆ wasemployed as an etching gas. The silicon oxide film was etched under theconditions of the ratio of etching-gas flow rates: C₄ F₈ /(C₄ F₈ +CH₃F)=0.36, the processing pressure of the etching: 5 mTorr, and thetemperature of the sample holder: 20° C., while the added quantity ofSF₆ {C₄ F₈ /(C₄ F₈ +CH₃ F)} was changed within a range of 0-0.3. Then,an etching rate A₁, a selection ratio B₁, and uniformity C₁ within asurface to-be-etched were as shown in FIGS. 2 and 3.

It is seen from FIGS. 2 and 3 that, when the gas SF₆ is mixed, theetching rate A₁ and the uniformity C₁ within the surface to-be-etchedare both enhanced as compared with those in the case where it is notmixed.

In addition, FIGS. 4 and 5 show an etching rate A₂, a selection ratioB₂, and uniformity C₂ within a surface to-be-etched in the case wherethe silicon oxide film was etched under the conditions of the ratio ofetching-gas flow rates: 0.6, the added quantity of SF₆ : 0.3, and theprocessing pressure of the etching: 5 mTorr, while the temperature ofthe sample holder was changed within a range of 20° C. -40° C. by acooler.

As seen from FIG. 4, by lowering the sample holder temperature to orbelow 0° C., the selection ratio B₂ is improved and heightened even whenthe gas SF₆ is mixed in the etching gas, and it becomes nearly equal tothe selection ratio B₁ in the case shown in FIG. 2 where the sampleholder is not cooled and where the gas SF₆ is not mixed in the etchinggas. Besides, as shown in FIGS. 4 and 5, the etching rate A₂ and theuniformity C₂ within the surface to-be-etched are enhanced as understoodby comparing them with respective curves A₃ and C₃ in the case where thegas SF₆ is not mixed in the etching gas. That is, the etching rate andthe uniformity within the surface to-be-etched can be improved while thesame extent of selection ratio as in the case of employing a mixed gasconsisting of C₄ F₈ and CH₃ F as the etching gas is kept.

Besides, the etching process of the silicon oxide film was performedunder the conditions of the ratio of etching-gas flow rates: {C₃ F₆ /(C₃F₆ +CH₃ F)}=0.6, the added quantity of SF₆ : {SF₆ /(C₃ F₆ +CH₃ F)}=0.3,and the processing pressure of the etching: 5 mTorr, while thetemperature of the sample holder was changed within the range of 20° C.--40° C.

Curves in FIGS. 6 and 7 indicate similarly to those in FIGS. 4 and 5,that the etching rate and the uniformity within the surface to-be-etchedcan be improved while the same extent of selection ratio as in the caseof employing the mixed gas consisting of C₄ F₈ and CH₃ F as the etchinggas is kept. Accordingly, even when the gas C₄ F₈ is replaced with thegas C₃ F₆ and the mixed gas consisting of CH₃ F and SF₆ is used,substantially equal effects can be attained.

In addition, FIGS. 8 and 9 show the characteristics of an etching rateA₅, a selection ratio B₅, and uniformity C₅ within a surfaceto-be-etched in the case where the silicon oxide film was etched bymixing CH₄ instead of the gas CH₃ F in the etching gas exhibitive of thecharacteristics shown in FIGS. 4 and 5 and under the conditions of theratio of etching-gas flow rates: {C₄ F₈ /(C₄ F₈ +CH₄)}=0.35, the addedquantity of SF₆ : {SF₆ /(C₄ F₈ +CH₄)}=0.3, and the processing pressureof the etching: 5 m Torr, while the temperature of the sample holder waschanged within the range of 20° C.--40° C.

As seen from FIGS. 8 and 9, even when this etching gas is used,characteristics similar to those in the foregoing cases shown in FIG. 4and FIG. 6 can be obtained. That is, the etching rate and the uniformitywithin the surface to-be-etched can be enhanced while the selectionratio before the mixing of the gas SF₆ is kept.

Further, substantially the same effects can be attained even when otherfluorocarbon gases denoted by C_(x) F_(y), such as C₂ F₆, C₃ F₈ and C₅F₁₀, are used instead of the gas C₄ F₈ or C₃ F₆.

Next, there will be explained examples of the detection of an etchingend point in the case of the etching process of the silicon oxide filmof a sample. Incidentally, a fluorocarbon gas was employed as an etchinggas.

As a technique for detecting the etching end point of a silicon oxidefilm which is subjected to an etching process by the use of the gaseousplasma of a fluorocarbon gas, there has been known, for example, one asdisclosed in Japanese Patent Publication No. 52421/1982 wherein thelight emission of carbon monoxide contained in the plasma is monitored,and the point of time at which the light emission has decreased isdetected, thereby to detect the etching end point of the silicon oxidefilm in this case.

The prior-art technique is intended to detect the etching end point ofthe silicon oxide film which is subjected to the etching process by thereactive sputter etching. This technique does not take it intoconsideration at all to detect the etching end point of the siliconoxide film which is subjected to the etching process by employing theplasma of the fluorocarbon gas generated by the interaction between amicrowave electric field and a magnetic field under a reduced pressure.

More specifically, an experiment conducted by the inventors of thepresent invention has revealed that, in the case of the etching processof the silicon oxide film by such microwave plasma etching of the typehaving the magnetic field which differs from the reactive sputteretching, the end point of the etching cannot be detected even when thelight emission of carbon monoxide is selected. Of course, the etchingend point cannot be detected even in case of the etching process of thesilicon oxide film by the microwave plasma etching of the type havingthe magnetic field in which the flow rate of the fluorocarbon gas ischanged or in which two or more kinds of fluorocarbon gases are usedwith the flow rate ratio thereof changed.

The first example of the detection of the etching end point will beexplained with reference to FIG. 10.

FIG. 10 shows the S/N (signal-to-noise) ratios of various wavelengths atthe etching of the silicon oxide film and at the end thereof in the casewhere the silicon oxide film was subjected to the etching process byemploying a mixed gas consisting of C₄ F₈ and CH₂ F₂ as the fluorocarbongas. Herein, the mixed gas was introduced into the electric dischargeregion (not shown) of the microwave plasma etching equipment of the typehaving the magnetic field, at flow rates of 25 sccm for the C₄ F₈ gasand 15 sccm for the CH₂ F₂ gas. The mixed gas in the electric dischargeregion was turned into plasma under a reduced pressure of about 5 m Torrby the interaction between a microwave electric field at 2.45 GHz and amagnetic field of 875 gauss. The silicon oxide film was etched using theplasma.

Referring to FIG. 10, the S/N ratio width values of the light emissionsof carbon molecules, oxygen atoms and fluorine atoms in the lightemission of the plasma are larger as compared with that of the lightemission of carbon monoxide having heretofore been utilized.Particularly in FIG. 10, the S/N ratios at the wavelengths of the carbonmolecules (388.9 nm, 469.8 nm, 471.5 nm, 473.7 nm, 512.9 nm, 516.5 nm,558.6 nm and 563.5 nm) are about 1.5, that is, the S/N ratio width valuebecomes about 0.5; the S/N ratios at the wavelengths of the oxygen atoms(777.1 nm, 777.4 nm and 777.5 nm) are about 0.3, that is, the S/N ratiowidth value becomes about 0.7; and the S/N ratio at the wavelength ofthe fluorine atoms (685.6 nm) is about 1.6, that is, the S/N ratio widthvalue becomes about 0.6. In this manner, the values larger than the S/Nratio width value 0.1 (S/N ratio=1.1) at the wavelength of carbonmonoxide (519.6 nm) have been obtained.

The light emission having such a large S/N ratio width value isseparated and selected by means (not shown) for spectrally selecting thelight emission from within the plasma. The emission intensity of theselected light emission has its variation with-time monitored by monitormeans (not shown), and the etching end point of the silicon oxide filmis detected by detection means (not shown). By way of example, afunction of the emission intensity of the selected light emission andthe time period of the etching process of the silicon oxide film isquadratically differentiated, and the etching end point of the siliconoxide film is detected when the value of the quadratic differentiationhas reached an end-point decision value. Since, in this case, the S/Nratio width value is large, the quadratic differentiation value becomeslarge, and the etching end point of the silicon oxide film can bedetected at high accuracy.

Incidentally, results similar to those in FIG. 10 are obtained even in acase where the mixed gas is turned into plasma as stated above under apressure reduced down to about 50 mtorr and where a silicon oxide filmis subjected to an etching process by the use of the plasma.

In addition, although the mixed gas consisting of C₄ F₈ and CH₂ F₂ isemployed in this case, similar results are obtained even when one kindof fluorocarbon gas, for example, C₄ F₈ is used without employing thetwo kinds of fluorocarbon gases in the above manner.

Besides, in FIG. 10, the S/N ratio of the light emission of SiF (436.8nm) is about 0.75, that is, the S/N ratio width value is 0.25. Even withthis light emission, the end point of etching can be favorably detected.

The second example of the detection of the etching end point will beexplained with reference to FIG. 11.

In the case of FIG. 11, the flow rates of the components of the etchinggas are 50 sccm for C₄ F₈ and 30 sccm for CH₂ F₂, and the otherconditions are the same as those of the first example described before.Regarding the flow rates, the ratio of the flow rates of the gases C₄ F₈and CH₂ F₂ remains unchanged, but the gas flow rates themselves arechanged. Such a measure is taken, for example, in a case where theselection ratio of etching (the selection ratio between the siliconoxide film and a silicon film being a subbing film) is to be changed.

Referring to FIG. 11, also in this case, the S/N ratio width values ofthe light emissions of carbon molecules, oxygen atoms and fluorine atomsin the light emission of the plasma are larger as compared with that ofthe light emission of carbon monoxide.

Important in the comparison of FIG. 11 with FIG. 10 is that the reversalphenomena of the S/N ratios of these light emissions do not arise due tothe change of the gas flow rates. This signifies that the etching endpoint can be detected stably and accurately in the case of, for example,the etching process of the silicon oxide film based on the changed andenhanced selection ratio. Here, the reversal phenomenon of the S/N ratiois a phenomenon in which the S/N ratio is reversed above and below withrespect to the S/N ratio=1.0. At the S/N ratio=1.0, the quadraticdifferentiation value becomes zero, so that the etching end point failsto be detected. By way of example, the S/N ratio of the light emissionof the compound SiF at the wavelength of 436.8 nm exhibits a value below1.0 in FIG. 10, but it exhibits a value above 1.0 in FIG. 11. With suchlight emission of the compound SiF, accordingly, the S/N ratio sometimesexhibits 1.0 due to the change of the gas flow rates, and the etchingend point cannot be detected stably and accurately in the case of, forexample, the etching process of the silicon oxide film based on thechanged and enhanced selection ratio.

The third example of the detection of the etching end point will beexplained with reference to FIG. 12.

In the case of FIG. 12, the flow rates of the components of the etchinggas are 10 sccm for C₄ F₈ and 15 sccm for CH₂ F₂, and the otherconditions are the same as those in FIG. 10. That is, when theconditions of both the examples are compared, the ratio of the flowrates of the gases C₄ F₈ and CH₂ F₂ is changed. Such a measure, namely,changing the ratio of the gas flow rates, is taken, for example, in caseof controlling an etching profile in the etching process of the siliconoxide film.

Referring to FIG. 12, also in this case, the S/N ratio width values ofthe light emissions of carbon molecules, oxygen atoms and fluorine atomsin the light emission of the plasma are larger as compared with that ofthe light emission of carbon monoxide.

Important in the comparison of FIG. 12 with FIG. 10 is that the reversalphenomena of the S/N ratios of these light emissions do not arise evenwith the change of the gas flow rates. This signifies that the etchingend point can be detected stably and accurately in the case of, forexample, the etching process of the silicon oxide film based on thecontrol of the etching profile.

Incidentally, by way of example, the S/N ratio of the light emission ofcarbon monoxide at the wavelength of 519.6 nm exhibits a value above 1.0in FIG. 10, but it exhibits a value below 1.0 in FIG. 12. With suchlight emission of carbon monoxide, accordingly, the S/N ratio sometimesexhibits 1.0 due to the change of the gas flow rates, and the etchingend point cannot be detected stably and accurately in the case of, forexample, the etching process of the silicon oxide film based on thecontrol of the etching profile.

Although the gases C₄ F₈ and CH₂ F₂ are employed as the fluorocarbongases in the above examples of the detection of the etching end point,other fluorocarbon gases such as C₂ F₆, C₃ F₆, C₃ F₈ and CH₃ F are alsoemployed.

The second embodiment of the present invention will be described withreference to FIGS. 13-16.

FIG. 13 is a vertical sectional constructional view of the essentialportions of a microwave plasma etching equipment in the secondembodiment of the present invention.

Referring to FIG. 13, in this case, the equipment is so constructed asto be capable of regulating the interval L between the top surface of anelectric discharge block 30a and the inner surface of the top wall of awaveguide 110a. In, for example, assembling the equipment or operatingthe equipment, the interval L is regulated in such a way that thewaveguide 110a or the electric discharge block 30a is moved in thevertical direction by means (not shown) for the vertical movementthereof. In FIG. 13, the other same components and units as in FIG. 1are indicated by the same symbols, and they shall be omitted fromdescription.

In the case of FIG. 13, the interval L is regulated in conformity withthe shape of the space 120a, that is, the shape in which the space isenlarged at the part of the waveguide 110a connected with the waveguide111 and is thereafter reduced at the part thereof corresponding to themicrowave transmitting window 40a. Thus, the impedance matching ofmicrowaves is possible, and the reflected waves of the microwaves from aload such as plasma can be made null. As shown in FIG. 14, a plasmadensity on this occasion is considered to rise several times as comparedwith that in the case of the prior-art technique employing asemispherical discharge tube. The reason therefor is that, since thereflected waves of the microwaves can be made null, the microwaves cometo be efficiently absorbed by the plasma.

FIG. 14 shows the relationships between the output power (P) and outputvoltage (E) of the power source in this embodiment (a) and the prior-arttechnique (b) as have been obtained in an experiment in which, in orderto simply compare the values of the plasma densities, an RF voltage ofconstant power characteristic was applied to the sample holder 61, andthe output voltage at that time was read. FIG. 14 indicates that, as theoutput voltage (E) is lower, a lower discharge impedance, namely, ahigher plasma density is attained.

In this embodiment, accordingly, the following effects are brought forthin addition to the effects in the first embodiment:

(1) Since the plasma density is high, the etching process rate can besharply enhanced.

(2) Since the plasma density is high, the acceleration energy of ionstoward the sample can be suppressed low, and an etching process of lightdamages can be realized.

By the way, the interval L between the top surface of the electricdischarge block 30a and the inner surface of the top wall of thewaveguide 110a should desirably be regulated depending upon theconditions of an etching process such as the kind of an etching gas andthe pressure of the etching process. It is also allowed, however, thatthe interval L is previously set by a preliminary experiment etc. andthat the equipment is designed and fabricated with the preset intervalL.

Next, the first practicable example of an apparatus setup for regulatingthe interval L between the top surface of the electric discharge blockand the inner surface of the top wall of the waveguide will be describedwith reference to FIG. 15.

As shown in FIG. 15, a waveguide 110b is formed of a cylinder having aninner diameter larger than each of the inner diameter of a waveguide 113and the inner diameter of the microwave inlet of an electric dischargeblock 30b. The waveguide 110b has a cross-sectional structure in whichits center axis is surrounded with a U-shaped conductor wall. That is,it has a structure similar to that of an EH tuner in a rectangularwaveguide. As readily understood, the shape of the cylinder can fulfillthe function of a microwave matching unit.

In the setup of FIG. 15, a hydraulic cylinder 150 installed at the lowerpart of the equipment is driven, whereby the height between the topsurface of the electric discharge block 30b and the inner surface of thetop wall of the waveguide 110b is regulated to establish the matching.Further, light emission in the plasma generated within a space 50b ismeasured by a spectroscope 152 through an optical fiber 151, thereby toestimate a plasma density. Using the estimated plasma density, acontroller 153 controls the matching in the waveguide 110b as statedabove in order to generate high-density plasma.

In this case, the microwaves are matched according to the light emissionin the plasma generated in the space 50b, whereby they can beefficiently supplied into the plasma generated in the space 50b. Thisbrings forth the effect that the high-density plasma is generated torealize a high-speed plasma etching process.

In addition, the second practicable example of the apparatus setup forregulating the interval L between the top surface of the electricdischarge block and the inner surface of the top wall of the waveguidewill be described with reference to FIG. 16.

As shown in FIG. 16, a reflector plate 154 made of a conductor such asA1 is disposed inside a waveguide 110b functioning as a microwavematching unit as stated above, and it is driven in the verticaldirection by an air cylinder 155, whereby an effective height in thewaveguide 110b is regulated to establish the matching. Besides, in thiscase, an RF voltage Vpp applied to a sample holder 61 is measured by anRF voltage measuring instrument 156, thereby to estimate a plasmadensity. Using the estimated plasma density, a controller 153 controlsthe matching in the waveguide 110b so as to generate high-densityplasma.

Herein, in addition to the effect in FIG. 15, there is the effect that,since the matching is established by moving only the reflector plate154, a small-sized driver such as the air cylinder 155 may well be used.Also, the setup in FIG. 16 has a structure in which the part of theelectric discharge block 30b corresponding to a microwave inlet has areduced inner diameter. This structure brings forth the effect that theinner diameter of the other part of the electric discharge block 30b canbe enlarged, so a sample 90 of large diameter can be etched andprocessed more homogeneously.

In the above, as the plasma state, the quantity which changes dependingupon an electron density, an electron temperature, an ion density, anion temperature, a radical density, a radical temperature, etc. ismeasured by utilizing the light emission in the plasma in the example ofFIG. 15 or by utilizing the RF voltage in the example of FIG. 16, andthe matching in the waveguide 110b is regulated on the basis of themeasured quantity so as to generate the high-density plasma. However,this embodiment need not be especially restricted to the examples inFIGS. 15 and 16. That is, this embodiment may be so constructed that thequantity which changes depending upon the aforementioned factors ismeasured as the plasma state and that the matching in the waveguide 110bis regulated on the basis of the measured quantity so as to generate thehigh-density plasma.

FIG. 17 is a vertical sectional constructional view of the essentialportions of a microwave plasma etching equipment in the third embodimentof the present invention.

In FIG. 17, the points of difference from FIG. 1 showing the firstembodiment of the present invention are that a waveguide 110c is onewhich is flared taperingly, and that the outer-peripheral side surfaceof an electric discharge block 30c is tapered along the shape of theinner-peripheral surface of the waveguide 110c (but that the shape ofthe inner cylindrical part of the block 30c is the same as in FIG. 1).The waveguide 110c is in a shape in which it is taperingly flared fromits end part connected with a waveguide 111, toward the electricdischarge block 30c. In addition, an air-core coil 140b arranged at anupper stage is endowed with an inner diameter smaller than that of anair-core coil 140a arranged at a lower stage, thereby to increase thenumber of its turns. Thus, it is suited to the intensity distribution ofa magnetic field which is applied to an electric discharge portion (themagnetic field is intense on a side from which microwaves areintroduced, and it weakens gradually toward the side of a vacuum vessel10). In FIG. 17, the other same components and units as in FIG. 1 areindicated by the same symbols, and they shall be omitted fromdescription.

This embodiment brings forth the following effect in addition to theeffects of the first embodiment: (1) Since the shape of the waveguideincluding the electric discharge block therein is tapered, the number ofturns of the air-core coil arranged at the upper stage can be increased,and a coil power source (not shown) for generating the maximum magneticfield can be made small in size.

The fourth embodiment of the present invention will be described withreference to FIG. 18.

FIG. 18 is a vertical sectional constructional view of the essentialportions of a microwave plasma etching equipment in the fourthembodiment of the present invention.

In FIG. 18, the point of difference from FIG. 1 showing the firstembodiment of the present invention is that an air-core coil 142a forapplying a correcting magnetic field is mounted round a sample holdershaft 60 on the side of a sample holder 61 remote from the samplesetting surface thereof. The air-core coil 142a serves to correct thatmagnetic field in the vicinity of the surface to-be-processed of asample 90 which is generated by air-core coils 140a and 141a forapplying a magnetic field to the interior of an electric discharge block30a. In FIG. 18, the other same components and units as in FIG. 1 areindicated by the same symbols, and they shall be omitted fromdescription.

In the embodiment of FIG. 18, in a state in which magnetic fluxes basedon the air-core coils 140a and 141a extend downwards as viewed in thefigure, the air-core coil 142a is operated as stated below. When themagnetic fluxes of the air-core coil 142a are directed upwards in thefigure, the combined magnetic field in the vicinity of the surfaceto-be-processed of the sample 90 is directed toward the outer peripheryof this surface to-be-processed of the sample 90. To the contrary, whenthe magnetic fluxes of the air-core coil 142a are directed downwards,the combined magnetic field is about to concentrate on the central partof the surface to-be-processed of the sample 90. Plasma to be generatedhas the property of easily diffusing in the flow direction of themagnetic fluxes. By regulating the direction and intensity of thecorrecting magnetic field, therefore, the density and diffusion state ofthe plasma can be corrected, and the etching process rate andhomogeneity of the sample can be corrected.

The fifth embodiment of the present invention will be described withreference to FIG. 19. In FIG. 19, the same components and units as inFIG. 1 showing the first embodiment of the present invention areindicated by the same symbols, and they shall be omitted fromdescription.

In FIG. 19, symbol 142b denotes an air-core coil for applying acorrecting magnetic field, and this coil achieves the same function andeffect as those of the air-core coil 142a in the fourth embodiment. Theair-core coil 142b is disposed on the side of the sample holder 61remote from the sample setting surface thereof, and outside the vacuumvessel 10, namely, in the atmosphere. As compared with the aircore coil142a in the fourth embodiment, therefore, the air-core coil 142b affordssuperior characteristics in the aspects of heat radiation, vacuumsealing and maintenance.

FIG. 20 shows the sixth embodiment of the present invention. In FIG. 20,the same components and units as in FIG. 1 showing the first embodimentof the present invention are indicated by the same symbols, and theyshall be omitted from description.

In FIG. 20, numeral 160 designates a circular polarized wave transducer,which is interposed between the waveguide 110a and the waveguide 111.

In the construction of FIG. 20, microwaves transformed into a circularwaveguide mode (TE₁₁ mode) by the waveguide 111 for arectangular/circular-mode orthogonal transformation are converted fromlinear polarized waves into circular polarized waves by the circularpolarized wave transducer 160. The circular polarized waves arepropagated to the waveguide 110a at the next stage, and are furtherpropagated to the interior of the electric discharge block 30a throughthe microwave transmitting window 40a.

In addition to the effects of the first embodiment, this embodimentbrings forth the effect that, owing to the use of the circular polarizedwave transducer, the generation density of plasma within the electricdischarge block can be raised several times the density in the firstembodiment, whereby the processing rate of the sample can be moreenhanced.

As the measure for raising the plasma density still more, the exampleutilizing the circular polarized waves has been explained in the sixthembodiment. As an alternative example, it is also effective to bring theoperation of the magnetron into pulse discharge.

FIG. 21 shows the seventh embodiment of the present invention. In FIG.21, the same components and units as in FIG. 1 showing the firstembodiment of the present invention are indicated by the same symbols,and they shall be omitted from description.

In the case of the first embodiment shown in FIG. 1, the means havingthe microwave matching function has been formed using the waveguide andpart of the conductor wall of the electric discharge block. On the otherhand, in this embodiment, as shown in FIG. 21, means having themicrowave matching function is formed only of a waveguide 110d, and itis connected to the space 50a through the microwave transmitting window40a.

With this embodiment, the same functions and effects as those of thefirst embodiment are attained.

Meanwhile, in the first and seventh embodiments, the cross-sectionalshape of the means having the microwave matching function has been theU-shape with respect to the center axis. However, even when a microwavepropagation region in a sectional view is in an L-shape with respect tothe center axis as in the eighth embodiment shown in FIG. 22 or is in aT-shape not shown, the same functions and effects as those of the firstand seventh embodiments are attained.

FIGS. 23-26 show the ninth embodiment of the present invention. In FIG.23, the same components and units as in FIG. 1 showing the firstembodiment of the present invention are indicated by the same symbols,and they shall be omitted from description.

Referring to FIG. 23, a heat medium chamber 170 is formed in an electricdischarge block 30e. The heat medium feed port of the heat mediumchamber 170 and a heat medium feeder (not shown) are connected by a heatmedium feed pipe 171, and a heat medium discharge pipe 172 is connectedto the heat medium discharge port of the heat medium chamber 170.

In the construction of FIG. 23, the heat medium chamber 170 is suppliedwith a heat medium at a predetermined temperature. Thus, the inner wallsurface of the electric discharge block 30e exposed to plasma is heated.The other etching process operations of the sample are the same as inthe first embodiment, and shall be omitted from description.

FIG. 24 is a graph obtained by investigating influence which was exertedon the selection ratio of the silicon oxide film of a sample 90 relativeto the silicon film thereof by the temperature of the inner wall surfaceof the electric discharge block 30e in the etching process of thesilicon oxide film conducted using CHF₃ (gas flow rate: 50 cc/min) beingone kind of fluorocarbon gas as an etching gas. In the graph of FIG. 24,the axis of ordinates represents the relative value of the selectionratio (relative selection ratio) in the case where the selection ratioof the silicon oxide film relative to the silicon film exhibited whenthe temperature of the inner wall surface of the electric dischargeblock 30e was 20° C. is set at 1.0. As the other etching processconditions, the microwave power was 1 kW, the etching pressure was 5 mTorr, the RF power was 200 W, and the temperature of cooling water fedto the sample holder 61 was 20° C.

As seen from FIG. 24, the relative selection ratio is enhanced byraising the temperature of the inner wall surface of the electricdischarge block 30e. By way of example, the relative selection ratio isenhanced about 1.7 times when the temperature of the inner wall surfaceof the electric discharge block 30e is 40° C., and it is enhanced about2.3 times when the temperature of the inner wall surface of the electricdischarge block 30e is 60° C. More specifically, since the deposition ofplasma polymers such as CF₄ onto the inner wall surface of the electricdischarge block 30e is relieved by heating this inner wall surface, theproportion of the polymers existent in the plasma enlarges to increasethe amount of deposition of the plasma polymers onto the sample 90. In acase where the plasma polymers have deposited on the silicon oxide filmof the sample 90, they are removed from this silicon oxide film by thereducing action of oxygen because the oxygen being a reductant iscontained in the silicon oxide film. Therefore, the etching rate of thesilicon oxide film does not lower. In contrast, in a case where theplasma polymers have deposited on the silicon film, the removal of theplasma polymers deposited on this silicon film is suppressed because noreductant exists in the silicon film. Therefore, the etching rate of thesilicon film lowers. In consequence of these facts, the selection ratioof the silicon oxide film relative to the silicon film being a subbingfilm is enhanced. By the way, as the temperature of the inner wallsurface of the electric discharge block is heightened, the relativeselection ratio is enhanced, but the tendency to the enhancement becomessaturated when the temperature of the inner wall surface of the electricdischarge block is about 200° C.

This embodiment brings forth the following effects in addition to theeffects of the first embodiment:

(1) In the etching process of the sample in which the silicon film andthe silicon oxide film are stacked, employing the plasma of thefluorocarbon gas; limitations which cannot be overcome by controllingthe etching gas conditions can be overcome, and the selection ratiorelative to the subbing silicon film can be enhanced.

(2) In the etching process of the sample in which the silicon film andthe silicon oxide film are stacked, employing the plasma of thefluorocarbon gas; the deposition of the plasma polymers onto the innerwall surface of the electric discharge block can be suppressed, so thatthe appearance of dust attributed to the peeling of the plasma polymersdeposited on the inner wall surface of the electric discharge block,from this inner wall surface, can be suppressed to prevent the loweringof the available percentage of the samples attributed to the dust.

Incidentally, in a case where, by way of example, mechanical clamp meansis employed for setting the sample on the sample setting surface of thesample holder, it is also a member which is exposed to the plasma. Fromthe viewpoint of enhancing the relative selection ratio, accordingly,also the mechanical clamp means should preferably be heated.

Next, in FIG. 25, the points of difference from FIG. 23 are that a heatmedium feeder 173 has the function of varying the temperature of theheat medium, and that a heat medium temperature controller 175 to whichthe heat medium feeder 173 and a terminal 174 for detecting thetemperature of the electric discharge block 30e are respectivelyconnected is provided. In FIG. 25, the other same components and unitsas in FIG. 23 are indicated by the same symbols, and they shall beomitted from description.

In the construction of FIG. 25, the inner wall surface of the electricdischarge block 30e is heated and has its temperature regulated by theheat medium. More specifically, the temperature of the inner wallsurface of the electric discharge block 30e changes during the etchingprocess of the sample 90. Also, in case of successively subjecting thesamples 90 to the etching processes one by one, the temperature of theinner wall surface of the electric discharge block 30e changes. When thetemperature of the inner wall surface of the electric discharge block30e has changed in this manner, the amount of deposition of plasmapolymers onto the inner wall surface changes. In consequence, theetching rate ratio between the silicon oxide film and the subbingsilicon film of the sample 90 changes to change the selection ratiobetween them. Therefore, the temperature of the inner wall surface ofthe electric discharge block 30e is detected by the temperaturedetecting terminal 174, and the detected value is input to the heatmedium temperature controller 175. In this heat medium temperaturecontroller 175, a comparison is made between the desired constant valueand the detected value of the temperature of the inner wall surface ofthe electric discharge block 30e, and the temperature of the heat mediumis set in accordance with the result of the comparison. The settemperature is input to the heat medium feeder 173 as a control signal.Thus, the heat medium brought to the set temperature is supplied fromthe heat medium feeder 173 into the heat medium chamber 170, and thetemperature of the inner wall surface of the electric discharge block30e is regulated to the predetermined constant value. Such a temperatureregulation for the inner wall surface of the electric discharge block30e is performed during the etching process of the sample 90 or in thecase of successively subjecting the samples 90 to the etching processesone by one.

FIG. 26 shows the changes with-time of the selection ratio of thesilicon oxide film relative to the silicon film as exhibited in a casewhere the temperature of the inner wall surface of the electricdischarge block 30e was regulated to 20° C. and in a case where it wasnot regulated. In FIG. 26, the axis of ordinates represents the relativevalue of the selection ratio (relative selection ratio with-time) in thecase where the selection ratio of the silicon oxide film of the firstprocessed sample relative to the silicon film is set at 1.0. As theother etching process conditions, the microwave power was 1 kW, theetching pressure was 10 mTorr, the flow rate of an etching gas (CHF₃)was 50 cc/min, the RF power was 200 W, and the temperature of coolingwater fed to the sample holder 61 was 20° C.

As seen from FIG. 26, in the case where the temperature regulation forthe inner wall surface of the electric discharge block 30e is performed,the relative selection ratio with-time relative to the silicon filmhardly changes (line I). In contrast, in the case where the temperatureregulation for the inner wall surface of the electric discharge block30e is not performed, the relative selection ratio with-time relative tothe silicon film in the 25th processed sample becomes about 2.4 timeslarger than the relative selection ratio relative to the silicon film inthe first processed sample (line II). Besides, the above embodiment isnot especially restrictive as the technique of the temperatureregulation of a member to be exposed to plasma, for preventing thechange of the relative selection ratio with-time. Anyway, a member to beexposed to plasma may have its temperature regulated in order to preventthe change of the relative selection ratio with-time.

In the above embodiment, the etching gas has been the fluorocarbon gas,and the sample has been one in which the silicon film and the siliconoxide film is stacked. Anyway, however, the embodiment is effectivelyapplicable to a sample in which a film containing a component capable ofremoving deposited plasma polymers and a film incapable of removing thedeposited plasma polymers are stacked.

FIG. 27 illustrates the tenth embodiment of the present invention.

In FIG. 27, the points of difference from FIG. 1 showing the firstembodiment are that the electric discharge block in FIG. 1 is replacedwith a mere cylinder which is a member forming a space 50d herein, andthat a space 120f defined between the top wall of a waveguide 110f beinga closed end wall and the top wall of the electric discharge block 30fserves as the internal space of a cylindrical cavity resonator. Themember forming the space 50d, which includes the cylinder correspondingto the electric discharge block 30f, is made of a nonmagnetic electricconductor. In FIG. 27, the other same components and units as in FIG. 1are indicated by the same symbols, and they shall be omitted fromdescription.

In the construction of FIG. 27, the microwaves oscillated by themicrowave oscillator 130 are propagated to the space 120f of thecylindrical cavity resonator through the rectangular waveguide 112, thewaveguide 111 for a rectangular/circular-mode orthogonal transformation,and a circular waveguide 113. The cylindrical cavity resonator ispermitted to resonate the propagated microwaves in a specifiedelectromagnetic field mode by appropriately selecting the inner diameterand length of the cylinder, and part of the microwaves of high energydensity in the specified mode as obtained by the resonance is introducedinto the space 50d through a microwave transmitting window 40d. In thespace 50d, the etching gas is turned into the plasma by the interactionbetween the microwave electric field and the magnetic field. Here, themicrowaves introduced into the space 50d have the high energy density inthe stable specified mode, so that the plasma to be generated is alsorendered high in density. Moreover, the plasma obtained is in a modewhich is thought to substantially correspond to the microwavetransmitting window 40d within the electromagnetic field distribution ofthe resonant mode. Accordingly, the plasma which has the high densityand which is uniform is obtained without being affected by the state ofthe space 50d, and the surface to-be-etched of the sample 90 issubjected to an etching process by the diffusion of the plasma along amagnetic field gradient.

In this embodiment, by way of example, the diameter of the microwavetransmitting window 40d is set at 200 mm, the inner diameter of thewaveguide 110f at 270 mm, the mode of the cylindrical cavity resonatorinto TE₁₁₂, and the frequency of the microwaves at 2.45 GHz. Then, aplasma density which is, for example, about 5 times as high as that inthe equipment disclosed in Japanese Patent Laid-open No. 122217/1987 isattained in the space 50d having a diameter of 200 mm, and also thehomogeneity of an etching process is sharply enhanced. By the way, inview of the dimension of the inner diameter of the space 50d, the sample90 is restricted in size so as to be received and processed in thisspace. In principle, however, the sample 90 having a larger size can becoped with by enlarging the aforementioned dimensions in similarity.

FIG. 28 illustrates the eleventh embodiment of the present invention.

In FIG. 28, the point of difference from FIG. 15 showing the firstpracticable example of the apparatus setup, which regulates the intervalL between the top surface of the electric discharge block 30b and theinner surface of the top wall of the waveguide 110b in the secondembodiment, is that a diaphragm 180 is disposed in a space 120c having amicrowave matching function, whereupon the matching is established byregulating the aperture of the diaphragm 180. This diaphragm 180 isfabricated of an electric conductor such as A1.

According to this embodiment, in addition to the effect of the firstpracticable example in FIG. 15, there are brought forth the effects thatthe microwave matching unit can be fabricated more easily and that thematching can be promptly established owing to the high response rate ofthe movable portion.

Also in this embodiment, likewise to the first or second practicableexample of the apparatus setup in the second embodiment, the plasmadensity can be estimated by the measurement utilizing the light emissionof the plasma or the measurement utilizing the RF voltage, and the meanshaving the microwave matching function can be controlled by thecontroller so as to generate the high density plasma. In addition, thisembodiment is similarly applicable to an etching equipment havinganother construction, for example, the etching equipment of theconstruction shown in FIG. 17. In this case, the internal space of thewaveguide overlying the electric discharge block need not always be thespace having the microwave matching function. Besides, although theaperture of the diaphragm is regulable in this embodiment, it may wellbe fixed to a predetermined aperture.

In the foregoing embodiments, the applications to the microwave plasmaetching equipment of the type having a magnetic field have beenexemplarily described. Needless to say, however, the present inventionis similarly applicable to other equipments including a microwave CVDequipment of the type having a magnetic field, and a microwave plasmaetching equipment, an ashing equipment and a CVD equipment of the typehaving no magnetic field. When the present invention is applied to themicrowave CVD equipment in this manner, the homogeneity of a formed filmis enhanced, and the rate of film formation can be enhanced.

According to the present invention, in processing a sample by the use ofa microwave plasma processing apparatus in which a waveguide sectionincludes electric discharge means isolated from a waveguide for thepropagation of microwaves and having a plasma generation region therein,there is brought forth the effect that the uniformity of a plasmadensity distribution corresponding to the surface to-be-processed of asample can be sharply enhanced, so the homogeneity of the process withinthe surface to-be-processed of the sample as utilizes plasma can beenhanced.

Besides, according to the present invention, along with the above effectthat the homogeneity of the process within the surface to-be-processedof the sample can be enhanced, there is brought forth the effect that,since ions to enter the surface to-be-processed of the sample can beaccelerated and the density of the plasma can be heightened, theprocessing rate of the sample can be raised.

Further, according to the present invention, along with the above effectthat the homogeneity of the process within the surface to-be-processedof the sample can be enhanced, there is brought forth the effect that,since the plasma density can be heightened, the acceleration energy ofthe ions for the sample can be suppressed low to enhance the processwith light damages.

What is claimed is:
 1. A microwave plasma processing method for treatinga surface of a sample by use of a plasma comprising the stepsof:generating microwaves; resonating said microwaves at a resonationmode in a cavity resonator; extracting a part of said microwaves fromsaid resonation mode in said cavity resonator; transmitting said part ofsaid microwaves from said cavity resonator to a plasma generation regionof a vacuum vessel, wherein said vacuum vessel and said cavity resonatorare separated by a microwave transmitting window and only a part of saidmicrowaves in said cavity resonator is transmitted to said plasmageneration region only through said microwave transmitting window, andwherein at least a portion of said vacuum vessel adjacent said cavityresonator has a diameter smaller than that of said cavity; interacting agas with said part of said microwaves in said plasma generation regionto generate said plasma; and treating said sample with said plasma.
 2. Amicrowave plasma processing method as defined in claim 1, wherein saidgas is an etching gas and is introduced into electric discharge meansdefining said plasma generation region, and wherein the etching gas isturned into the plasma under, at least, the action of the electric fieldof the microwaves, and the surface to-be-processed of the sample issubjected to an etching process with the plasma.
 3. A microwave plasmaprocessing method as defined in claim 2, wherein a mixed gas consistingof C_(x) F_(y), CH₃ F and SF₆ is employed as the etching gas, and asilicon oxide film of the sample is subjected to the etching processwith the plasma of the mixed gas.
 4. A microwave plasma processingmethod as defined in claim 2, wherein a mixed gas consisting of C_(x)F_(y), CH₄ and SF₆ is employed as the etching gas, and a silicon oxidefilm of the sample is subjected to the etching process with the plasmaof the mixed gas.
 5. A microwave plasma processing method as defined inclaim 3 or 4, wherein a sample holder on which the sample is set is heldat a temperature of at most 0° C.
 6. A microwave plasma processingmethod as defined in claim 2, wherein a fluorocarbon gas is employed asthe etching gas, a silicon oxide film of the sample is subjected to theetching process with the plasma of the fluorocarbon gas, and an etchingend point of the silicon oxide film is detected by selecting lightemission of carbon molecules, oxygen atoms or fluorine atoms containedin the plasma of the fluorocarbon gas and monitoring variation with-timein an intensity of the selected light emission.
 7. A microwave plasmaprocessing method as defined in claim 2, wherein a fluorocarbon gas isemployed as the etching gas, a silicon oxide film of the sample in whichthe silicon oxide film is stacked on a silicon film is subjected to theetching process with the plasma of the fluorocarbon gas, and saidelectric discharge means is heated during the etching process.
 8. Amicrowave plasma processing method as defined in claim 2, wherein afluorocarbon gas is employed as the etching gas, a silicon oxide film ofthe sample in which the silicon oxide film is stacked on a silicon filmis subjected to the etching process with the plasma of the fluorocarbongas, and wherein a temperature at an inside surface of a wall of saidelectric discharge means is detected, and said wall is heated so as tosuppress a change of detected temperature.
 9. A microwave plasmaprocessing method according to claim 1, wherein said microwavetransmitting window and the surface of the sample are substantiallyconcentric.
 10. A microwave plasma processing method for treating asurface of a sample by use of a plasma comprising the stepsof:generating microwaves; resonating said microwaves at a resonate modein a cavity resonator having a microwave transmitting window throughwhich said microwaves are derived from outside of said cavity resonator;introducing said microwaves derived through said microwave transmittingwindow into a vacuum chamber having a top airtight plate whose area isequal to that of said microwave transmitting window and smaller thanthat of said cavity resonator; supplying a gas into said vacuum chamberto interact with said microwaves introduced thereinto to generate aplasma; and treating said surface of said sample with said plasma.
 11. Amicrowave plasma processing method for etching a silicon oxide film of asample by use of a plasma comprising the steps of:generating microwaves;resonating said microwaves at a resonate mode in a cavity resonator;transmitting said microwaves having a transmitting mode within saidresonate mode of said microwaves in said cavity resonator only through amicrowave transmitting window to a vacuum space to provide saidmicrowaves of said transmitting mode in said vacuum space, wherein saidvacuum space and said cavity resonator are gastightly separated, andsaid at least a portion of said vacuum space adjacent said cavityresonator has a diameter smaller than that of said cavity resonator;supplying a gas into said vacuum space to interact with said microwaveshaving said transmitting mode to generate a plasma; and treating saidsample with said plasma.
 12. A microwave plasma processing method foretching a silicon oxide film of a sample by use of a plasma comprisingthe steps of:generating microwaves; resonating said microwaves at aresonate mode in a cavity resonator; transmitting said microwaves havinga transmitting mode within said resonate mode of said microwaves in saidcavity resonator only through a microwave transmitting window to avacuum space to provide said microwaves of said transmitting mode insaid vacuum space, wherein said vacuum space and said cavity resonatorare gastightly separated and said at least a portion of said vacuumspace adjacent said cavity resonator has a diameter smaller than that ofsaid cavity resonator; introducing an etching gas having a carboncomponent into said vacuum vessel; generating a plasma having a plasmapolymers from said etching gas in said vacuum vessel; and heating aninner surface of said vacuum vessel to reduce an amount of a depositionof said plasma polymers onto a inner surface of said vacuum vessel andto increase an amount of a deposition of said plasma polymers on asurface of said sample.
 13. A method of claim 12, wherein said etchinggas is a hydrofluorocarbon gas.
 14. A method of claim 12, wherein saidetching gas is fluorocarbon gas.
 15. A microwave plasma processingmethod according to claim 12, wherein said microwave transmitting windowand the surface of the sample are substantially concentric.
 16. Amicrowave plasma processing method for treating a surface of a sample byuse of a plasma comprising the steps of:generating microwaves:resonating said microwaves at a resonate mode in a cavity resonator;transferring said microwaves having a transmitting mode within saidresonate mode of said microwaves in said cavity resonator only through amicrowave transmitting window to a vacuum space, wherein said vacuumspace and said cavity resonator are gastightly separated, and said atleast a portion of said vacuum space adjacent said cavity resonator hasa diameter smaller than that of said cavity resonator, wherein saidmicrowave transmitting window and the surface of the sample aresubstantially concentric, supplying a gas into said vacuum space tointeract with said microwaves having said transmitting mode to generatea plasma: and treating said surface of sample with said plasma.